发明授权
- 专利标题： Method of fabrication an integrated circuit
- 专利标题（中）： 集成电路制造方法
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申请号： US12693405申请日： 2010-01-25
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公开(公告)号： US08003529B2公开(公告)日： 2011-08-23
- 发明人: Suh Fei Lim , Kok Wai Chew , Sanford Shao-Fu Chu , Michael Chye Huat Cheng
- 申请人： Suh Fei Lim , Kok Wai Chew , Sanford Shao-Fu Chu , Michael Chye Huat Cheng
- 申请人地址： SG Singapore
- 专利权人： Globalfoundries Singapore Pte. Ltd.
- 当前专利权人： Globalfoundries Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte. Ltd.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of forming an integrated circuit is disclosed. The method includes providing a substrate and forming on the substrate a shield structure comprising a shield member and a ground strap. The shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.
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