发明授权
US08003545B2 Method of forming an electronic device including forming features within a mask and a selective removal process
有权
形成电子设备的方法,包括在掩模内形成特征和选择性去除过程
- 专利标题: Method of forming an electronic device including forming features within a mask and a selective removal process
- 专利标题(中): 形成电子设备的方法,包括在掩模内形成特征和选择性去除过程
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申请号: US12031458申请日: 2008-02-14
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公开(公告)号: US08003545B2公开(公告)日: 2011-08-23
- 发明人: Todd Lukanc , Hung-Eil Kim
- 申请人: Todd Lukanc , Hung-Eil Kim
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method of forming an electronic device can include forming a patterned mask layer overlying a underlying layer such that the mask layer has a first feature, a second feature, and a third feature, and the first feature is between the second feature and the third feature. The first feature can be spaced apart from the second feature by a first opening in the mask layer, and can be spaced apart from the third feature by a second opening in the mask layer. The method can further include selectively removing portions of the underlying layer under the first opening, the second opening, the second feature, and the third feature, and also removing the second feature and the third feature while leaving substantially all of the first feature and a significant portion of the underlying layer under the first feature.
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