发明授权
- 专利标题： Buffer layers for coated conductors
- 专利标题（中）： 涂层导体的缓冲层
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申请号： US11890812申请日： 2007-08-07
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公开(公告)号： US08003571B2公开(公告)日： 2011-08-23
- 发明人: Liliana Stan , Quanxi Jia , Stephen R. Foltyn
- 申请人： Liliana Stan , Quanxi Jia , Stephen R. Foltyn
- 申请人地址： US NM Los Alamos
- 专利权人： Los Alamos National Security, LLC
- 当前专利权人： Los Alamos National Security, LLC
- 当前专利权人地址： US NM Los Alamos
- 代理商 Holly L. Teeter; Juliet A. Jones; Bruce H. Cottrell
- 主分类号： H01B12/00
- IPC分类号： H01B12/00 ; H01L39/00 ; H01L31/00
摘要：
A composite structure is provided including a base substrate, an IBAD oriented material upon the base substrate, and a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material. Additionally, an article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and a thick film upon the cubic metal oxide material. Finally, a superconducting article is provided including a base substrate, an IBAD oriented material upon the base substrate, a cubic metal oxide material selected from the group consisting of rare earth zirconates and rare earth hafnates upon the IBAD oriented material, and an yttrium barium copper oxide material upon the cubic metal oxide material.
公开/授权文献
- US20080234134A1 Buffer layers for coated conductors 公开/授权日：2008-09-25
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