发明授权
- 专利标题： Metal gate compatible electrical antifuse
- 专利标题（中）： 金属门兼容电气反熔丝
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申请号： US11946938申请日： 2007-11-29
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公开(公告)号： US08004060B2公开(公告)日： 2011-08-23
- 发明人: Deok-kee Kim , Chandrasekharan Kothandaraman , Dan Moy , Norman W. Robson , John M. Safran , Kenneth J. Stein
- 申请人： Deok-kee Kim , Chandrasekharan Kothandaraman , Dan Moy , Norman W. Robson , John M. Safran , Kenneth J. Stein
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A metal layer and a semiconductor layer are sequentially deposited on a substrate. The semiconductor layer and the metal layer are lithographically patterned to form a stack of a semiconductor portion and a metal gate portion, which is preferably performed concurrently with formation of at least one metal gate stack. In one embodiment, the size of the semiconductor portion is reduced and a metal semiconductor alloy portion is formed on the semiconductor portion by metallization. In a first electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the metal semiconductor alloy portion and the metal gate portion. In another embodiment, two disjoined metal semiconductor alloy portions are formed on the semiconductor portion. In a second electrical antifuse formed thereby, the metal semiconductor alloy portion may be electromigrated to form a short between the two previously disjoined metal semiconductor alloy portions.
公开/授权文献
- US20090141533A1 METAL GATE COMPATIBLE ELECTRICAL ANTIFUSE 公开/授权日：2009-06-04
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