发明授权
- 专利标题： Fully silicided gate structure for FinFET devices
- 专利标题（中）： FinFET器件的全硅化栅极结构
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申请号： US11379435申请日： 2006-04-20
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公开(公告)号： US08008136B2公开(公告)日： 2011-08-30
- 发明人: Ming-Ren Lin , Witold P. Maszara , Haihong Wang , Bin Yu
- 申请人： Ming-Ren Lin , Witold P. Maszara , Haihong Wang , Bin Yu
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a second metal layer on a top surface of the metal-silicide compound, and performing a second silicide process to form a fully-silicided gate electrode.
公开/授权文献
- US20060177998A1 FULLY SILICIDED GATE STRUCTURE FOR FINFET DEVICES 公开/授权日：2006-08-10
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