发明授权
- 专利标题： Dopant implantation method using multi-step implants
- 专利标题（中）： 使用多步植入物的掺杂剂植入法
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申请号： US12170656申请日： 2008-07-10
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公开(公告)号： US08008158B2公开(公告)日： 2011-08-30
- 发明人: Tse-En Chang , Chih-Fu Chang , Bone-Fong Wu , Chieh Chih Ting , Shao Hua Wang , Pu-Fang Chen , Yen Chuang
- 申请人： Tse-En Chang , Chih-Fu Chang , Bone-Fong Wu , Chieh Chih Ting , Shao Hua Wang , Pu-Fang Chen , Yen Chuang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8236
摘要：
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.
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