发明授权
US08008162B2 Select devices including an open volume, memory devices and systems including same, and methods for forming same
有权
选择包括开放卷的设备，包括其的存储设备和系统以及用于形成它们的方法
- 专利标题： Select devices including an open volume, memory devices and systems including same, and methods for forming same
- 专利标题（中）： 选择包括开放卷的设备，包括其的存储设备和系统以及用于形成它们的方法
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申请号： US12274181申请日： 2008-11-19
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公开(公告)号： US08008162B2公开(公告)日： 2011-08-30
- 发明人: Bhaskar Srinivasan , Gurtej S. Sandhu
- 申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.