利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US08008172B2 Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layer 有权
形成半导体器件的方法包括半平面化和半导体层的结晶化

Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layer
摘要：
A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization process without exposing the pattern; performing an epitaxy growth process on the first planarized semiconductor layer to form a crystalline semiconductor layer; and planarizing the crystalline semiconductor layer until the pattern is exposed to form a crystalline semiconductor pattern.
摘要（中）：

一种形成半导体器件的方法包括：在半导体衬底上形成具有沟槽的图案; 在所述半导体器件上形成填充所述沟槽的半导体层; 使用第一平坦化工艺平坦化半导体层而不暴露图案; 在所述第一平坦化半导体层上进行外延生长工艺以形成晶体半导体层; 并且平坦化晶体半导体层直到图案被曝光以形成晶体半导体图案。

公开/授权文献
信息查询
Espacenet
0/0