发明授权
- 专利标题： Semiconductor device manufacturing method, semiconductor device, and semiconductor wafer structure
- 专利标题（中）： 半导体器件制造方法，半导体器件和半导体晶片结构
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申请号： US12034976申请日： 2008-02-21
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公开(公告)号： US08008189B2公开(公告)日： 2011-08-30
- 发明人: Kouichi Nagai
- 申请人： Kouichi Nagai
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-040323 20070221
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor device manufacturing method, includes the steps of forming an insulating film over a semiconductor substrate, thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film, forming contact holes in a thinned portion of the insulating film 25, and forming conductive plugs in the contact holes.
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