发明授权
US08008211B2 Pattern forming method, semiconductor device manufacturing apparatus and storage medium
有权
图案形成方法，半导体器件制造装置和存储介质
- 专利标题： Pattern forming method, semiconductor device manufacturing apparatus and storage medium
- 专利标题（中）： 图案形成方法，半导体器件制造装置和存储介质
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申请号： US12343968申请日： 2008-12-24
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公开(公告)号： US08008211B2公开(公告)日： 2011-08-30
- 发明人: Akitake Tamura , Teruyuki Hayashi , Kaoru Fujihara
- 申请人： Akitake Tamura , Teruyuki Hayashi , Kaoru Fujihara
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-339922 20071228
- 主分类号： H01L21/461
- IPC分类号： H01L21/461
摘要：
A pattern forming method includes (a) forming pairs of deposits on sidewalls of mask portions in first mask patterns by forming a thin film thereon, etching it to leave deposits, and exposing a top surface of a second-layer film between the deposits; (b) forming second mask patterns formed of mask portions corresponding to the deposits by removing the mask portion, plasma etching the second-layer film, and removing the deposits; (c) forming a thin film thereon, and etching it to leave deposits on sidewalls of mask portions facing each other and to expose a third-layer film between the deposits while leaving deposits between adjacent mask portions; and (d) forming grooves thereon by removing the second mask portion, and etching off the third-layer film.
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