发明授权
US08008707B2 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
有权
在存储单元中设置有电荷存储层的非易失性半导体存储器件
- 专利标题： Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
- 专利标题（中）： 在存储单元中设置有电荷存储层的非易失性半导体存储器件
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申请号： US12333983申请日： 2008-12-12
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公开(公告)号： US08008707B2公开(公告)日： 2011-08-30
- 发明人: Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- 申请人： Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-323317 20071214; JP2008-008301 20080117; JP2008-127125 20080514; JP2008-136568 20080526
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.
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