公开(公告)号：US20130064553A1

公开(公告)日：2013-03-14

申请号：US13610795

申请日：2012-09-11

申请人： Koji NAKAHARA

发明人： Koji NAKAHARA

IPC分类号： H04B10/14

CPC分类号： H04B10/564 ,  G02B6/4215 ,  G02B6/4246

摘要： An optical communication module comprising: a light emitting element to emit light; a light transmission medium to receive incidence of the light from the light emitting element; a diverging unit to be provided on the light transmission medium and to diverge some proportion of the light emitted from the light emitting element to the light transmission medium and propagating within the light transmission medium; and a first light receiving element to receive the light from the light emitting element, which is diverged by the diverging unit.

摘要翻译： 一种光通信模块，包括：发光元件; 光传输介质，用于接收来自发光元件的光的入射; 设置在光传输介质上的发散单元，并且将从发光元件发射的光的一部分分散到光传输介质并在光传输介质内传播; 以及第一光接收元件，用于接收来自发光元件的光，该光被发散单元分流。

公开(公告)号：US08008707B2

公开(公告)日：2011-08-30

申请号：US12333983

申请日：2008-12-12

申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层和形成在第二绝缘层上的控制电极 绝缘层。 第二绝缘层包括在电荷存储层上形成的第一氧化硅膜，形成在第一氧化硅膜上的氮化硅膜，形成在氮化硅膜上的金属氧化物膜，以及形成在金属氧化物膜上的氮化物膜 。 金属氧化物膜的相对介电常数不小于7。

公开(公告)号：US06846754B2

公开(公告)日：2005-01-25

申请号：US10369556

申请日：2003-02-21

申请人： Takashi Udagawa ,  Koji Nakahara

发明人： Takashi Udagawa ,  Koji Nakahara

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L21/31 ,  B05D5/12 ,  H01L21/469

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S439/909

摘要： A vapor-phase growth method for forming a boron-phosphide-based semiconductor layer on a single-crystal silicon (Si) substrate in a vapor-phase growth reactor. The method includes preliminary feeding of a boron (B)-containing gas, a phosphorus (P)-containing gas, and a carrier gas for carrying these gases into a vapor-phase growth reactor to thereby form a film containing boron and phosphorus on the inner wall of the vapor-phase growth reactor; and subsequently vapor-growing a boron-phosphide-based semiconductor layer on a single-crystal silicon substrate. Also disclosed is a boron-phosphide-based semiconductor layer prepared by the vapor-phase growth method.

摘要翻译： 一种用于在气相生长反应器中在单晶硅（Si）衬底上形成磷化硼基半导体层的气相生长方法。 该方法包括将含硼（B）的气体，含磷（P）的气体和用于将这些气体携带到气相生长反应器中的载气预先进料，从而在其上形成含有硼和磷的膜 气相生长反应器的内壁; 随后在单晶硅衬底上蒸发生长一种磷化硼基半导体层。 还公开了通过气相生长法制备的基于磷化硼的半导体层。

公开(公告)号：US5432660A

公开(公告)日：1995-07-11

申请号：US78116

申请日：1993-06-18

申请人： Kazunori Kono ,  Tatsuto Mizukami ,  Hiroshi Nakamori ,  Koji Nakahara

发明人： Kazunori Kono ,  Tatsuto Mizukami ,  Hiroshi Nakamori ,  Koji Nakahara

IPC分类号： G11B15/675 ,  G11B25/06 ,  G11B33/02

CPC分类号： G11B15/67584 ,  G11B25/063 ,  G11B33/027

摘要： A cover apparatus of a cassette tape recorder comprising first and second covers rotatable to be openable and closable with respect to a body of the tape recorder, the first cover having a holder to encase a tape cassette so that the tape cassette encased in the cassette holder is rotatable in accordance with the rotation of the first cover. The first and second covers are coupled to each other through a slider engaged with the second cover and slidable along a side surface of the first cover. The first cover rotates to cover the entire tape cassette in cooperation with the second cover when the second cover is closed with respect to the tape recorder body. The second cover vertically moves by a predetermined height with respect to a surface of the first cover in accordance with a first sliding operation of the slider when the first cover is opened by a first predetermined angle with respect to the tape recorder body and horizontally moving a predetermined distance with respect to the surface of the first cover in accordance with a second sliding operation of the slider when said the cover is opened by a second predetermined angle greater than the first predetermined angle so that a portion of the tape cassette protrudes from a tip portion of the second cover. This arrangement allows the easily insertion and removal into and from the holder of the first cover.

摘要翻译： 一种盒式磁带录像机的盖装置，包括第一和第二盖，其可旋转以相对于磁带录音机的本体可打开和关闭，第一盖具有用于封装盒式磁带的保持架，以便将磁带盒包装在磁带盒中 可根据第一盖的旋转而旋转。 第一和第二盖通过与第二盖接合并且可沿着第一盖的侧表面滑动的滑块彼此联接。 当第二盖相对于磁带记录器主体关闭时，第一盖旋转以与第二盖协作地覆盖整个磁带盒。 当第一盖相对于磁带录像机主体打开第一预定角度时，根据滑块的第一滑动操作，第二盖相对于第一盖的表面垂直移动预定高度，并且水平移动 当所述盖以大于所述第一预定角度的第二预定角度打开时，根据所述滑块的第二滑动操作相对于所述第一盖的表面的预定距离，使得所述带盒的一部分从尖端突出 第二盖的一部分。 这种布置允许容易地插入和移出第一盖的保持器。

公开(公告)号：US20110298039A1

公开(公告)日：2011-12-08

申请号：US13207149

申请日：2011-08-10

申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

IPC分类号： H01L29/792 ,  H01L29/78

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层和形成在第二绝缘层上的控制电极 绝缘层。 第二绝缘层包括在电荷存储层上形成的第一氧化硅膜，形成在第一氧化硅膜上的氮化硅膜，形成在氮化硅膜上的金属氧化物膜，以及形成在金属氧化物膜上的氮化物膜 。 金属氧化物膜的相对介电常数不小于7。

公开(公告)号：US6052254A

公开(公告)日：2000-04-18

申请号：US74546

申请日：1993-06-11

申请人： Kazunori Kono ,  Koutarou Kashima ,  Masayoshi Yano ,  Tatsuo Mizukami ,  Hiroshi Nakamori ,  Koji Nakahara

发明人： Kazunori Kono ,  Koutarou Kashima ,  Masayoshi Yano ,  Tatsuo Mizukami ,  Hiroshi Nakamori ,  Koji Nakahara

IPC分类号： G11B33/02 ,  G11B15/675 ,  G11B25/06

CPC分类号： G11B25/063 ,  G11B15/67584

摘要： A cover apparatus of a cassette tape recorder comprising first and second covers rotatable to be openable and closable with respect to a body of the tape recorder. The first cover has a holder to encasing a tape cassette so that the tape cassette encased in the holder is rotatable in accordance with the rotation of the first cover, a length of the first cover in longitudinal directions being smaller than that of the tape cassette so that a portion of the tape cassette protrudes from the first cover when being encased in the holder. The second cover is arranged to be engaged with the first cover to be rotatable together with the first cover and movable along a surface of the first cover. The second cover, together with the first cover, rotates to cover the entire tape cassette when the first cover is closed with respect to the tape recorder body, and further the second cover moves with respect to the first cover when the first cover is opened with respect thereto, so that the portion of the tape cassette protrudes from tip portions of the first and second covers. This arrangement allows the user to easily take out the tape cassette from the tape recorder.

摘要翻译： 一种盒式录音机的封盖装置，包括第一和第二盖，其可旋转以相对于磁带录音机的本体可开启和关闭。 第一盖具有包围盒式磁带的保持器，使得封装在保持架中的磁带盒可根据第一盖的旋转而旋转，第一盖的长度方向上的长度小于盒式磁带的长度， 当被包装在保持器中时，带盒的一部分从第一盖突出。 第二盖布置成与第一盖接合以与第一盖一起旋转并且可沿着第一盖的表面移动。 当第一盖相对于磁带记录器主体关闭时，第二盖与第一盖一起旋转以覆盖整个磁带盒，并且当第一盖打开时第二盖相对于第一盖移动， 使得带盒的部分从第一和第二盖的尖端部分突出。 这种布置允许用户容易地从磁带录音机取出磁带盒。

公开(公告)号：US07172659B2

公开(公告)日：2007-02-06

申请号：US10481025

申请日：2002-06-24

申请人： Hiroyuki Tomizawa ,  Koji Nakahara ,  Yuji Kaneko

发明人： Hiroyuki Tomizawa ,  Koji Nakahara ,  Yuji Kaneko

IPC分类号： H01F1/053 ,  H01F1/057 ,  H01F1/058

CPC分类号： H01F1/057 ,  H01F1/0578 ,  H01F1/058 ,  H01F41/0253

摘要： The present invention is a production method of an R-T-B—C rare earth alloy (R is at least one element selected from the group consisting of rare earth elements and yttrium, T is a transition metal including iron as a main component, B is boron, and C is carbon). An R-T-B bonded magnet containing a resin component, or an R-T-B sintered magnet with a resin film formed on the surface thereof is prepared, and a solvent alloy containing a rare earth element R and a transition metal element T is prepared. Thereafter, the R-T-B bonded magnet is molten together with the solvent alloy. In this way, a rare earth alloy can be recovered from a spent bonded magnet or a defective one generated in a production process stage, and a rapidly quenched alloy magnet can be obtained. As a result, magnet powder is recovered from the R-T-B magnet, and the recycling of a magnet including a resin component can be realized.

摘要翻译： 本发明是RTBC稀土类合金的制造方法（R为选自稀土元素和钇中的至少一种元素，T为以铁为主要成分的过渡金属，B为硼，C为 是碳）。 制备含有树脂组分的R-T-B粘结磁体或其表面上形成有树脂膜的R-T-B烧结磁体，并制备含有稀土元素R和过渡金属元素T的溶剂合金。 此后，R-T-B粘结磁体与溶剂合金一起熔融。 以这种方式，可以从废粘结磁体或在生产工艺阶段产生的缺陷合金中回收稀土合金，并且可以获得快速淬火的合金磁体。 结果，从R-T-B磁体中回收磁铁粉末，能够实现包含树脂成分的磁体的再循环。

公开(公告)号：US08742487B2

公开(公告)日：2014-06-03

申请号：US13207149

申请日：2011-08-10

申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer and including a first high dielectric insulating film which has a higher relative permittivity than a silicon nitride film and a second high dielectric insulating film which has a higher relative permittivity than a silicon nitride film, the first and second high dielectric insulating films being structured so that a silicon oxide film is interposed between them, a control electrode formed on the second insulation layer, a first portion formed between the charge storage layer and the second insulation layer and containing silicon and nitrogen, and a second portion containing silicon and oxygen and located between the charge storage layer and the second insulation layer.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层，并且包括第一高介电绝缘膜， 具有比氮化硅膜更高的相对介电常数的相对介电常数和比氮化硅膜具有更高的相对介电常数的第二高介电绝缘膜，第一和第二高介电绝缘膜被构造成在它们之间插入氧化硅膜， 形成在所述第二绝缘层上的控制电极，形成在所述电荷存储层和所述第二绝缘层之间并且包含硅和氮的第一部分，以及位于所述电荷存储层和所述第二绝缘层之间的含有硅和氧的第二部分 。

公开(公告)号：US08471326B2

公开(公告)日：2013-06-25

申请号：US13049573

申请日：2011-03-16

申请人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka

发明人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka

IPC分类号： H01L21/762 ,  H01L27/115

CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L27/11539 ,  H01L27/11541 ,  H01L27/11543

摘要： According to one embodiment, a semiconductor substrate includes a cell region and a peripheral circuit region, a first dielectric film is formed on the semiconductor substrate in the cell region and the peripheral circuit region, a first conductive film is formed on the first dielectric film in the cell region and the peripheral circuit region, a first inter-conductive-film dielectric film is formed on the first conductive film in the cell region, a second inter-conductive-film dielectric film is formed on the first conductive film in the peripheral circuit region and a film thickness thereof is larger than the first inter-conductive-film dielectric film, and a second conductive film is formed on the first inter-conductive-film dielectric film in the cell region and the second inter-conductive-film dielectric film in the peripheral circuit region.

摘要翻译： 根据一个实施例，半导体衬底包括单元区域和外围电路区域，在单元区域和外围电路区域中的半导体衬底上形成第一电介质膜，在第一电介质膜上形成第一导电膜 单元区域和外围电路区域，在单元区域中的第一导电膜上形成第一导电膜电介质膜，在外围电路的第一导电膜上形成第二导电膜电介质膜 区域，其膜厚度大于第一导电膜电介质膜，并且第二导电膜形成在电池区域中的第一导电膜电介质膜上，第二导电膜电介质膜 在外围电路区域。

公开(公告)号：US20130069135A1

公开(公告)日：2013-03-21

申请号：US13423664

申请日：2012-03-19

申请人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

发明人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

摘要： A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.

摘要翻译： 半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括：第一堆叠，其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜，或包括第二高介电常数膜和第三氧化硅膜的第二堆叠， 形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。 在第三区域中，第二氮化硅膜比第一区域相对薄。