发明授权
- 专利标题: Method of manufacturing an integrated circuit
- 专利标题(中): 集成电路的制造方法
-
申请号: US12624442申请日: 2009-11-24
-
公开(公告)号: US08012844B2公开(公告)日: 2011-09-06
- 发明人: Christoph Dirnecker , Philipp Steinmann , Badih El-Kareh
- 申请人: Christoph Dirnecker , Philipp Steinmann , Badih El-Kareh
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 优先权: DE102008060077 20081202
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A method of manufacturing an integrated circuit comprises depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR), depositing an electrically insulating layer on the resistor layer, removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area, and depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and the conductive layer electrically contacts the resistor layer outside the target TFR area.
公开/授权文献
- US20100136764A1 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT 公开/授权日:2010-06-03
信息查询
IPC分类: