发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12815782申请日： 2010-06-15
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公开(公告)号： US08012849B2公开(公告)日： 2011-09-06
- 发明人: Masayoshi Asano , Yoshiyuki Suzuki
- 申请人： Masayoshi Asano , Yoshiyuki Suzuki
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2005-340869 20051125
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A channel stop region is formed immediately under an STI, and thereafter, an ion implantation is performed with conditions in which an impurity is doped into an upper layer portion of an active region, and at the same time, the impurity is also doped into immediately under another STI, and a channel dose region is formed at the upper layer portion of the active region, and another channel stop region is formed immediately under the STI.
公开/授权文献
- US20100255648A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2010-10-07
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