Invention Grant
- Patent Title: High power light emitting diode
- Patent Title (中): 大功率发光二极管
-
Application No.: US11939552Application Date: 2007-11-13
-
Publication No.: US08013355B2Publication Date: 2011-09-06
- Inventor: Chun-Cheng Lin , Abram Chang , Sheng-Jia Sheu , Eddie Huang
- Applicant: Chun-Cheng Lin , Abram Chang , Sheng-Jia Sheu , Eddie Huang
- Applicant Address: TW Tu Chen
- Assignee: Everlight Electronics Co., Ltd.
- Current Assignee: Everlight Electronics Co., Ltd.
- Current Assignee Address: TW Tu Chen
- Agency: Chen Yoshimura LLP
- Priority: TW96212458U 20070730
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L31/0203 ; H01L31/0232

Abstract:
A high power light emitting diode, The high power light emitting diode comprises a light emitting diode chip, a main module, two first electrode pins, two second electrode pins, and at least one heat dissipation board. The main module has a concave and the light emitting diode chip is positioned in the concave. The first electrode pins are connected to a first side of the main module and also electrically connected to the light emitting diode chip. The second electrode pins are arranged on a second side of the main module that is relative to the first electrode pins wherein the second electrode pins and the first electrode pins are electrically opposite. The second electrode pins are electrically connected to the light emitting diode chip. The heat dissipation board is connected to a part of the main module between the first electrode pin and the second electrode pin.
Public/Granted literature
- US20090032822A1 HIGH POWER LIGHT EMITTING DIODE Public/Granted day:2009-02-05
Information query
IPC分类: