发明授权
US08013383B2 Nonvolatile semiconductor storage device including a plurality of memory strings
有权
包括多个存储器串的非易失性半导体存储装置
- 专利标题： Nonvolatile semiconductor storage device including a plurality of memory strings
- 专利标题（中）： 包括多个存储器串的非易失性半导体存储装置
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申请号： US12389856申请日： 2009-02-20
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公开(公告)号： US08013383B2公开(公告)日： 2011-09-06
- 发明人: Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Akihiro Nitayama , Hitoshi Ito , Yasuyuki Matsuoka
- 申请人： Masaru Kidoh , Masaru Kito , Ryota Katsumata , Yoshiaki Fukuzumi , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi , Akihiro Nitayama , Hitoshi Ito , Yasuyuki Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-043530 20080225
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer.
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