发明授权
- 专利标题： Electrostatic discharge protection devices
- 专利标题（中）： 静电放电保护装置
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申请号： US11771565申请日： 2007-06-29
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公开(公告)号： US08013393B2公开(公告)日： 2011-09-06
- 发明人: Akram Salman , Stephen Beebe
- 申请人： Akram Salman , Stephen Beebe
- 申请人地址： US TX Austin
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L23/62
- IPC分类号： H01L23/62
摘要：
A method for fabricating a semiconductor device is provided. According to this method, a first gate electrode and a second gate electrode are formed overlying a first portion of a silicon substrate, and ions of a first conductivity-type are implanted into a second portion of the silicon substrate to define a first conductivity-type diode region within the silicon substrate. Ions of a second conductivity-type are implanted into a third portion of the silicon substrate to define a second conductivity-type diode region within the silicon substrate. During one of the steps of implanting ions of the first conductivity-type and implanting ions of the second conductivity-type, ions are also implanted into at least part of the first portion to define a separation region within the first portion. The separation region splits the first portion into a first well device region and a second well device region. The separation region is formed in series between the first well device region and the second well device region.
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