Solution-processed high mobility inorganic thin-film transistors

Invention Grant

US08017458B2 Solution-processed high mobility inorganic thin-film transistors 有权

Title translation: 溶液处理的高迁移率无机薄膜晶体管

Patent Title: Solution-processed high mobility inorganic thin-film transistors
Patent Title (中): 溶液处理的高迁移率无机薄膜晶体管
Application No.: US12322399

Application Date: 2009-02-02
Publication No.: US08017458B2

Publication Date: 2011-09-13
Inventor: Tobin J. Marks , Antonio Facchetti , Paul D. Byrne , Hyun Sung Kim
Applicant: Tobin J. Marks , Antonio Facchetti , Paul D. Byrne , Hyun Sung Kim
Applicant Address: US IL Evanston
Assignee: Northwestern University
Current Assignee: Northwestern University
Current Assignee Address: US IL Evanston
Agency: K&L Gates LLP
Main IPC: H01L21/00
IPC: H01L21/00

Abstract:

Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices.

Abstract(Chinese):

包含用于制造薄膜晶体管器件的无机半导体元件的流体介质。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备