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公开(公告)号:US08513646B2
公开(公告)日:2013-08-20
申请号:US13223931
申请日:2011-09-01
IPC分类号: B82Y10/00
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/78681
摘要: Thin film transistor devices comprising a dielectric component and an inorganic semiconductor component coupled thereto, wherein said coupled inorganic semiconductor component is obtainable by a process that comprises contact of said dielectric component and a fluid medium comprising said inorganic semiconductor component.
摘要翻译: 薄膜晶体管器件包括介电部件和耦合到其上的无机半导体部件,其中所述耦合的无机半导体部件可通过包括所述电介质部件和包括所述无机半导体部件的流体介质的接触的工艺获得。
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2.
公开(公告)号:US20120223314A1
公开(公告)日:2012-09-06
申请号:US13223931
申请日:2011-09-01
IPC分类号: H01L29/786
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/78681
摘要: Thin film transistor devices comprising a dielectric component and an inorganic semiconductor component coupled thereto, wherein said coupled inorganic semiconductor component is obtainable by a process that comprises contact of said dielectric component and a fluid medium comprising said inorganic semiconductor component.
摘要翻译: 薄膜晶体管器件包括介电部件和耦合到其上的无机半导体部件,其中所述耦合的无机半导体部件可通过包括所述电介质部件和包括所述无机半导体部件的流体介质的接触的工艺获得。
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公开(公告)号:US08017458B2
公开(公告)日:2011-09-13
申请号:US12322399
申请日:2009-02-02
IPC分类号: H01L21/00
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/78681
摘要: Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices.
摘要翻译: 包含用于制造薄膜晶体管器件的无机半导体元件的流体介质。
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公开(公告)号:US20090206341A1
公开(公告)日:2009-08-20
申请号:US12322399
申请日:2009-02-02
IPC分类号: H01L29/786 , H01L21/208
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02628 , H01L27/1292 , H01L29/78681
摘要: Fluid media comprising inorganic semiconductor components for fabrication of thin film transistor devices.
摘要翻译: 包含用于制造薄膜晶体管器件的无机半导体元件的流体介质。
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