发明授权
US08017461B2 Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
有权
形成半导体绝缘（SOI）场效应晶体管与体接触的方法
- 专利标题： Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts
- 专利标题（中）： 形成半导体绝缘（SOI）场效应晶体管与体接触的方法
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申请号： US12721944申请日： 2010-03-11
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公开(公告)号： US08017461B2公开(公告)日： 2011-09-13
- 发明人: Sung-young Lee , Dong-suk Shin
- 申请人： Sung-young Lee , Dong-suk Shin
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers bigel Sibley & Sajovec, P.A.
- 优先权： KR2004-48211 20040625
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.
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