公开(公告)号：US20080113474A1

公开(公告)日：2008-05-15

申请号：US11972131

申请日：2008-01-10

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US20110318890A1

公开(公告)日：2011-12-29

申请号：US13229050

申请日：2011-09-09

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US20050285194A1

公开(公告)日：2005-12-29

申请号：US11082069

申请日：2005-03-16

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/06 ,  H01L29/786

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US20050285193A1

公开(公告)日：2005-12-29

申请号：US11081538

申请日：2005-03-17

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

CPC分类号： H01L29/78639 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687

摘要： A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体器件包括形成在半导体衬底上的栅电极，形成在栅电极下方的空间的有源区，形成在栅电极和空间之间的沟道区，以及形成在栅电极的相对侧上的源极和漏极区 活跃区域。 通过在活性区域中蚀刻形成在栅电极下方的半导体层来形成空间。

公开(公告)号：US08263444B2

公开(公告)日：2012-09-11

申请号：US13229050

申请日：2011-09-09

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/84

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US08017461B2

公开(公告)日：2011-09-13

申请号：US12721944

申请日：2010-03-11

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/84

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US07989296B2

公开(公告)日：2011-08-02

申请号：US12015646

申请日：2008-01-17

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/78639 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687

摘要： A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体器件包括形成在半导体衬底上的栅电极，形成在栅电极下方的空间的有源区，形成在栅电极和空间之间的沟道区，以及形成在栅电极的相对侧上的源极和漏极区 活跃区域。 通过在活性区域中蚀刻形成在栅电极下方的半导体层来形成空间。

公开(公告)号：US20060076625A1

公开(公告)日：2006-04-13

申请号：US11033769

申请日：2005-01-12

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L27/12

CPC分类号： H01L29/7851 ,  H01L29/165 ,  H01L29/78687

摘要： Field effect transistors (FETs) and methods of fabricating FETs that include a channel layer on sidewalls of a structure on a semiconductor substrate and having at least a portion of the channel layer strained in a direction that the sidewalls of the structure extend from the semiconductor substrate are provided. The transistor may be a FinFET, the structure on the semiconductor substrate that includes a fin structure and the sidewalls may be sidewalls of the fin structure. The channel layer may be a Si epitaxial layer and may be on an inner fin structure that includes alternating layers of SiGe and Si. The channel layer may include strained and unstrained portions. The strained and unstrained portions may be sidewalls of the channel layer.

摘要翻译： 场效应晶体管（FET）和制造FET的方法，其包括在半导体衬底上的结构的侧壁上的沟道层，并且至少部分沟道层沿着结构的侧壁从半导体衬底延伸的方向应变 被提供。 晶体管可以是FinFET，半导体衬底上的包括鳍结构的结构，并且侧壁可以是鳍结构的侧壁。 沟道层可以是Si外延层，并且可以在包括SiGe和Si的交替层的内部翅片结构上。 通道层可以包括应变和非限制部分。 应变和未应变部分可以是沟道层的侧壁。

公开(公告)号：US07704808B2

公开(公告)日：2010-04-27

申请号：US11972131

申请日：2008-01-10

申请人： Sung-young Lee ,  Dong-suk Shin

发明人： Sung-young Lee ,  Dong-suk Shin

IPC分类号： H01L21/84

CPC分类号： H01L29/66651 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78654

摘要： Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulating layer extends on a second portion of the surface of the substrate and also on a first sidewall of the first semiconductor active region. A second electrically insulating layer is provided, which extends on a third portion of the surface of the semiconductor substrate. The second electrically insulating layer also extends on a second sidewall of the first semiconductor active region. A second semiconductor active region is provided on the first semiconductor active region. The second semiconductor active region extends on the first semiconductor active region and on ends of the first and second electrically insulating layers. Source and drain regions are also provided, which are electrically coupled to opposite ends of the second semiconductor active region. An insulated gate electrode extends on the second semiconductor active region and opposite the first semiconductor active region.

摘要翻译： 绝缘体上半导体（SOI）场效应晶体管包括在衬底表面的第一部分上的半导体衬底和第一半导体有源区。 提供第一电绝缘层。 该第一电绝缘层在衬底的表面的第二部分上以及在第一半导体有源区的第一侧壁上延伸。 提供了第二电绝缘层，其在半导体衬底的表面的第三部分上延伸。 第二电绝缘层也在第一半导体有源区的第二侧壁上延伸。 第二半导体有源区设置在第一半导体有源区上。 第二半导体有源区在第一半导体有源区和第一和第二电绝缘层的端部上延伸。 还提供了源极和漏极区域，其电耦合到第二半导体有源区域的相对端。 绝缘栅电极在第二半导体有源区上延伸并与第一半导体有源区相对。

公开(公告)号：US07402483B2

公开(公告)日：2008-07-22

申请号：US11190695

申请日：2005-07-26

申请人： Eun-jung Yun ,  Sung-min Kim ,  Sung-young Lee

发明人： Eun-jung Yun ,  Sung-min Kim ,  Sung-young Lee

IPC分类号： H01L21/8238

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66772

摘要： A multi-bridge-channel MOSFET (MBCFET) may be formed by forming a stacked structure on a substrate that includes channel layers and interchannel layers interposed between the channel layers. Trenches are formed by selectively etching the stacked structure. The trenches run across the stacked structure parallel to each other and separate a first stacked portion including channel patterns and interchannel patterns from second stacked portions including channel and interchannel layers remaining on both sides of the first stacked portion. First source and drain regions are grown using selective epitaxial growth. The first source and drain regions fill the trenches and connect to second source and drain regions defined by the second stacked portions. Marginal sections of the interchannel patterns of the first stacked portion are selectively exposed. Through tunnels are formed by selectively removing the interchannel patterns of the first stacked portion beginning with the exposed marginal sections. The through tunnels are surrounded by the first source and drain regions and the channel patterns. A gate is formed along with a gate dielectric layer, the gate filling the through tunnels and extending onto the first stacked portion.

摘要翻译： 可以通过在包括沟道层和介于沟道层之间的沟道间层的衬底上形成层叠结构来形成多桥沟MOSFET（MBCFET）。 通过选择性地蚀刻堆叠结构形成沟槽。 沟槽横跨层叠结构彼此平行地延伸，并且将包括通道图案和沟道间图案的第一堆叠部分与第二堆叠部分分开，包括残留在第一堆叠部分两侧的通道和通道间层。 使用选择性外延生长生长第一源区和漏区。 第一源极和漏极区域填充沟槽并连接到由第二堆叠部分限定的第二源极和漏极区域。 选择性地暴露第一堆叠部分的通道间图案的边缘部分。 通过从暴露的边缘部分开始选择性地去除第一堆叠部分的通道间图案，形成通道。 穿通隧道被第一源极和漏极区域以及沟道图案包围。 栅极与栅极电介质层一起形成，栅极填充通孔并延伸到第一堆叠部分上。