Invention Grant
US08017498B2 Multiple die structure and method of forming a connection between first and second dies in same
有权
多个模具结构和在第一和第二模具之间形成连接的方法
- Patent Title: Multiple die structure and method of forming a connection between first and second dies in same
- Patent Title (中): 多个模具结构和在第一和第二模具之间形成连接的方法
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Application No.: US12284531Application Date: 2008-09-22
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Publication No.: US08017498B2Publication Date: 2011-09-13
- Inventor: Lakshmi Supriya , Gloria Alejandra Camacho-Bragado
- Applicant: Lakshmi Supriya , Gloria Alejandra Camacho-Bragado
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A multiple die structure includes a first die (110), a second die (120), a carbon nanotube (130) having a first end (131) in physical contact with the first die and having a second end (132) in physical contact with the second die, and an electrically conductive material (240) in physical contact with the first end of the carbon nanotube and in physical contact with the first die. Forming a connection between the first die and the second die can include providing a connection structure (400, 500, 600, 900) in which the electrically conductive material is adjacent to the carbon nanotube, placing the connection structure adjacent to the first die and to the second die, and bonding the first die and the second die to the connection structure.
Public/Granted literature
- US20100072617A1 Multiple die structure and method of forming a connection between first and second dies in same Public/Granted day:2010-03-25
Information query
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