发明授权
- 专利标题: Luminescence diode chip with current spreading layer and method for producing the same
- 专利标题(中): 具有电流扩散层的LED芯片及其制造方法
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申请号: US12158474申请日: 2006-11-21
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公开(公告)号: US08017953B2公开(公告)日: 2011-09-13
- 发明人: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- 申请人: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- 申请人地址: DE Regensburg
- 专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Fish & Richardson P.C.
- 优先权: DE102005061797 20051223
- 国际申请: PCT/DE2006/002046 WO 20061121
- 国际公布: WO2007/076743 WO 20070712
- 主分类号: H01L27/15
- IPC分类号: H01L27/15
摘要:
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
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