发明授权
US08017953B2 Luminescence diode chip with current spreading layer and method for producing the same 有权
具有电流扩散层的LED芯片及其制造方法

Luminescence diode chip with current spreading layer and method for producing the same
摘要:
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
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