发明授权
- 专利标题： Nonvolatile semiconductor memory device and method for manufacturing same
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12405522申请日： 2009-03-17
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公开(公告)号： US08017993B2公开(公告)日： 2011-09-13
- 发明人: Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi
- 申请人： Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-171009 20080630
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and a charge storage layer located on both sides of each of the electrode films in the stacking direction and insulated from the electrode film and the semiconductor pillar.
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