Invention Grant
- Patent Title: Guard ring structures and method of fabricating thereof
- Patent Title (中): 保护环结构及其制造方法
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Application No.: US12900308Application Date: 2010-10-07
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Publication No.: US08018022B2Publication Date: 2011-09-13
- Inventor: John Victor D. Veliadis , Megan J. Snook
- Applicant: John Victor D. Veliadis , Megan J. Snook
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Andrews Kurth LLP
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.
Public/Granted literature
- US20110042776A1 GUARD RIND STRUCTURES AND METHOD OF FABRICATING THEREOF Public/Granted day:2011-02-24
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