公开(公告)号：US07825487B2

公开(公告)日：2010-11-02

申请号：US12285139

申请日：2008-09-30

申请人： John Victor D. Veliadis ,  Megan J. Snook

发明人： John Victor D. Veliadis ,  Megan J. Snook

IPC分类号： H01L23/58

CPC分类号： H01L29/0619 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

公开(公告)号：US08018022B2

公开(公告)日：2011-09-13

申请号：US12900308

申请日：2010-10-07

申请人： John Victor D. Veliadis ,  Megan J. Snook

发明人： John Victor D. Veliadis ,  Megan J. Snook

IPC分类号： H01L23/58

CPC分类号： H01L29/0619 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

摘要翻译： 一种用于半导体器件的保护环结构。 保护环结构包括在第一层顶部具有第一层和第二层的半导体层堆叠，形成在第一层中的栅极结构; 并在第一层形成保护环。 第二层具有高于第一层的掺杂剂浓度的掺杂剂浓度。 门和保护环是使用单个掩模同时形成的。

公开(公告)号：US06300640B1

公开(公告)日：2001-10-09

申请号：US09197248

申请日：1998-11-20

申请人： Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

发明人： Rameshwar Nath Bhargava ,  Nikhil R. Taskar ,  Vishal Chhabra ,  John Victor D. Veliadis

IPC分类号： G01T120

CPC分类号： G01T1/20 ,  G21K2004/06 ,  G21K2004/12

摘要： A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.

摘要翻译： 用于将诸如X射线的辐射转换成可见光的复合荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 微通道和/或衬底表面的壁包括光反射涂层，以将由磷光体发射的光反射到诸如膜或电子检测器的光收集装置。 根据具体应用，涂层可以是辐射透明的或过滤/衰减的。

公开(公告)号：US08138569B2

公开(公告)日：2012-03-20

申请号：US12900294

申请日：2010-10-07

申请人： John Victor D. Veliadis ,  Megan J. Snook

发明人： John Victor D. Veliadis ,  Megan J. Snook

IPC分类号： H01L23/58

CPC分类号： H01L29/0619 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

摘要翻译： 一种用于半导体器件的保护环结构。 保护环结构包括在第一层顶部具有第一层和第二层的半导体层堆叠，形成在第一层中的栅极结构; 并在第一层形成保护环。 第二层具有高于第一层的掺杂剂浓度的掺杂剂浓度。 门和保护环是使用单个掩模同时形成的。

公开(公告)号：US20110049666A1

公开(公告)日：2011-03-03

申请号：US12900294

申请日：2010-10-07

申请人： John Victor D. VELIADIS ,  Megan J. Snook

发明人： John Victor D. VELIADIS ,  Megan J. Snook

IPC分类号： H01L29/08

CPC分类号： H01L29/0619 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

摘要翻译： 一种用于半导体器件的保护环结构。 保护环结构包括在第一层顶部具有第一层和第二层的半导体层堆叠，形成在第一层中的栅极结构; 并在第一层形成保护环。 第二层具有高于第一层的掺杂剂浓度的掺杂剂浓度。 门和保护环是使用单个掩模同时形成的。

公开(公告)号：US20110042776A1

公开(公告)日：2011-02-24

申请号：US12900308

申请日：2010-10-07

申请人： JOHN VICTOR D. VELIADIS ,  MEGAN J. SNOOK

发明人： JOHN VICTOR D. VELIADIS ,  MEGAN J. SNOOK

IPC分类号： H01L29/08

CPC分类号： H01L29/0619 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/7827 ,  H01L29/8083 ,  H01L2924/0002 ,  H01L2924/00

摘要： A guard ring structure for use in a semiconductor device. The guard ring structure includes a semiconductor layer stack having a first layer and a second layer on top of the first layer, gates structures formed in the first layer; and guard rings formed in the first layer. The second layer has a dopant concentration that is higher than the dopant concentration of the first layer. The gates and the guard rings are formed simultaneously using a single mask.

摘要翻译： 一种用于半导体器件的保护环结构。 保护环结构包括在第一层顶部具有第一层和第二层的半导体层堆叠，形成在第一层中的栅极结构; 并在第一层形成保护环。 第二层具有高于第一层的掺杂剂浓度的掺杂剂浓度。 门和保护环是使用单个掩模同时形成的。

公开(公告)号：US07800196B2

公开(公告)日：2010-09-21

申请号：US12285138

申请日：2008-09-30

申请人： John Victor D. Veliadis ,  Ty R. McNutt

发明人： John Victor D. Veliadis ,  Ty R. McNutt

IPC分类号： H01L29/732

CPC分类号： H01L29/7813 ,  H01L24/48 ,  H01L24/49 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0661 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7325 ,  H01L29/7395 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/8083 ,  H01L29/8613 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An exemplary edge termination structure maintains the breakdown voltage of the semiconductor device after it has been sawed off the wafer and packaged by creating an electric field stop layer at a periphery of the semiconductor device. The electric field stop layer has a dopant concentration higher than that of the layer in which an edge termination is implemented, such as a drift layer or a channel layer. The electric field stop layer may be created by selectively masking the peripheries of the device during the device processing, i.e., mesa etch, to protect and preserve the highly doped material at the peripheries of the device.

公开(公告)号：US06452184B1

公开(公告)日：2002-09-17

申请号：US09385995

申请日：1999-08-30

申请人： Nikhil R. Taskar ,  John Victor D. Veliadis ,  Vishal Chhabra ,  Bharail Kulkarni ,  Neeta Pandit ,  Rameshwar Nath Bhargava ,  Roger Delano

发明人： Nikhil R. Taskar ,  John Victor D. Veliadis ,  Vishal Chhabra ,  Bharail Kulkarni ,  Neeta Pandit ,  Rameshwar Nath Bhargava ,  Roger Delano

IPC分类号： G01T120

CPC分类号： G01T1/20 ,  G21K2004/06 ,  G21K2004/12

摘要： A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.

摘要翻译： 用于将诸如X射线的辐射转换成可见光的复合荧光屏。 屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。 沉积在每个微通道内的是在辐射作用时发光的多种荧光体。 可以将基于微通道的光电倍增管与X射线检测器集成，以提供用于电影或荧光透视应用的低水平X射线的增强输出。 微通道和/或衬底表面的壁包括基于电介质叠层的光反射涂层。