发明授权
- 专利标题: High-linearity low noise amplifier
- 专利标题(中): 高线性低噪声放大器
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申请号: US12422430申请日: 2009-04-13
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公开(公告)号: US08018288B2公开(公告)日: 2011-09-13
- 发明人: Jon S. Duster , Stewart S. Taylor
- 申请人: Jon S. Duster , Stewart S. Taylor
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 David L. Guglielmi
- 主分类号: H03F3/04
- IPC分类号: H03F3/04
摘要:
Embodiments of a high-linearity low-noise amplifier (LNA) are generally described herein. Other embodiments may be described and claimed. In some embodiments, an RF input signal may be amplified with a cascode amplifier. The cascode amplifier may include integrated notch filters to attenuate undesired signals. The cascode amplifier may operate from a large power supply when blockers are present to avoid voltage swing compression at its output. The cascode amplifier may be biased and designed to operate in a class AB mode to produce linear output current to avoid current compression or excessive current expansion.
公开/授权文献
- US20100259331A1 HIGH-LINEARITY LOW NOISE AMPLIFIER 公开/授权日:2010-10-14
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