发明授权
US08018691B2 CPP dual free layer magnetoresistive head for magnetic data storage
有权
CPP双自由层磁阻磁头用于磁数据存储
- 专利标题: CPP dual free layer magnetoresistive head for magnetic data storage
- 专利标题(中): CPP双自由层磁阻磁头用于磁数据存储
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申请号: US12254662申请日: 2008-10-20
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公开(公告)号: US08018691B2公开(公告)日: 2011-09-13
- 发明人: Hardayal Singh Gill , Chang-Man Park
- 申请人: Hardayal Singh Gill , Chang-Man Park
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Zilka-Kotab, PC
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer.
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