发明授权
- 专利标题： Method for producing single crystal silicon solar cell and single crystal silicon solar cell
- 专利标题（中）： 单晶硅太阳能电池和单晶硅太阳能电池的制造方法
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申请号： US11907902申请日： 2007-10-18
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公开(公告)号： US08021910B2公开(公告)日： 2011-09-20
- 发明人: Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
- 申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2006-294605 20061030
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
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