公开(公告)号：US08563401B2

公开(公告)日：2013-10-22

申请号：US13127257

申请日：2009-11-11

申请人： Shoji Akiyama ,  Atsuo Ito

发明人： Shoji Akiyama ,  Atsuo Ito

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface 9 or the breakage of a bonded wafer.Provided is a method for manufacturing an SOI substrate 8 by forming an SOI layer 4 on a surface of a transparent insulating substrate 3, the method comprising, in the following order, implanting ions into a silicon wafer 5 or a silicon wafer 5 with an oxide film 7 from a surface thereof so as to form an ion-implanted layer 2; subjecting at least one of the surface of the transparent insulating substrate and the surface of the ion-implanted silicon wafer or the silicon wafer with an oxide film to a surface activation treatment; bonding together the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 and the transparent insulating substrate 3; subjecting the bonded wafer to a heat treatment at 150° C. or higher but not higher than 350° C. so as to obtain a laminate 6; and irradiating visible light at a side of the transparent insulating substrate 3 of the laminate 6 toward the ion-implanted layer 2 of the silicon wafer 5 or the silicon wafer 5 with an oxide film 7 to embrittle an interface of the ion-implanted layer 2 and transfer a silicon thin film to the transparent insulating substrate 3 so that the SOI layer 4 can be formed.

摘要翻译： 提供了一种能够有效且有效地脆化离子注入层的界面而不会导致接合面9分离或者接合晶片的断裂的SOI衬底的制造方法。提供了一种制造SOI衬底的方法 如图8所示，通过在透明绝缘基板3的表面上形成SOI层4，该方法包括以下顺序，从其表面将离子注入到具有氧化物膜7的硅晶片5或硅晶片5中，以便 形成离子注入层2; 将透明绝缘基板的表面和离子注入硅晶片或硅晶片的表面中的至少一个用氧化膜进行表面活化处理; 将硅晶片5或硅晶片5与氧化膜7和透明绝缘基板3接合在一起; 使接合晶片在150℃以上且不高于350℃进行热处理，得到层叠体6; 并且利用氧化膜7将层叠体6的透明绝缘性基板3侧的可见光朝向硅晶片5或硅晶片5的离子注入层2照射，从而使离子注入层2的界面脆化 并将硅薄膜转移到透明绝缘基板3，从而可以形成SOI层4。

公开(公告)号：US08420503B2

公开(公告)日：2013-04-16

申请号：US12933113

申请日：2009-04-01

申请人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Makoto Kawai ,  Atsuo Ito ,  Yoshihiro Kubota ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/12

摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.

摘要翻译： 一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。 制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。 该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

公开(公告)号：US08357586B2

公开(公告)日：2013-01-22

申请号：US12920363

申请日：2009-03-23

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/30608

摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 并在浸渍的剥离后的SOI晶片上进行900℃以上的温度的热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

公开(公告)号：US08021910B2

公开(公告)日：2011-09-20

申请号：US11907902

申请日：2007-10-18

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

摘要翻译： 一种单晶硅太阳能电池的制造方法，包括以下步骤：通过离子注入表面将离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击; 并在单晶硅层中形成p-n结。

公开(公告)号：US07977209B2

公开(公告)日：2011-07-12

申请号：US12161819

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶硅衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20110111575A1

公开(公告)日：2011-05-12

申请号：US13010103

申请日：2011-01-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20110111574A1

公开(公告)日：2011-05-12

申请号：US13010122

申请日：2011-01-20

申请人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji AKIYAMA ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

公开(公告)号：US20100289115A1

公开(公告)日：2010-11-18

申请号：US12161694

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L27/12 ,  H01L21/762

CPC分类号： H01L21/26506 ,  H01L21/26533 ,  H01L21/76254 ,  H01L29/78603

摘要： An oxide film having a thickness “tox” of not less than 0.2 μm is provided on the bonding surface of a single-crystal silicon substrate. In a method for manufacturing an SOI substrate according to the present invention, a low-temperature process is employed to suppress the occurrence of thermal strain attributable to a difference in the coefficient of thermal expansion between the silicon substrate and a quartz substrate. To this end, the thickness “tox” of the oxide film is set to a large value of not less than 0.2 μm to provide sufficient mechanical strength to the thin film to be separated and, at the same time, to allow strain to be absorbed in and relaxed by the relatively thick oxide film to suppress the occurrence of transfer defects during the step of separation.

摘要翻译： 在单晶硅基板的接合面上设置厚度“tox”为0.2μm以上的氧化膜。 在根据本发明的SOI衬底的制造方法中，采用低温工艺来抑制由硅衬底和石英衬底之间的热膨胀系数差异引起的热应变的发生。 为此，氧化膜的厚度“tox”被设定为不小于0.2μm的大值，以对要分离的薄膜提供足够的机械强度，并且同时允许应变被吸收 通过相对厚的氧化膜进入和松弛，以抑制分离步骤期间的转印缺陷的发生。

公开(公告)号：US07732867B2

公开(公告)日：2010-06-08

申请号：US11979447

申请日：2007-11-02

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L29/00

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/00 ,  H01L21/2007 ,  H01L29/78603 ,  Y10S438/967 ,  Y10T428/31612

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 is bonded to the quartz substrate 20 having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer 11 to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.

摘要翻译： 将氢离子注入到单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11.作为氢离子注入的结果，氢离子注入的边界12为 形成。 将单晶Si衬底10接合到碳浓度为100ppm以上的石英衬底20上，并且在离子注入损伤层11附近施加外部冲击，以沿着氢离子注入边界12剥离Si晶体膜 的单晶Si衬底10。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造出SOQ基板。 可以提供高度适应于半导体器件制造工艺的SOQ衬底。

公开(公告)号：US07696059B2

公开(公告)日：2010-04-13

申请号：US12285409

申请日：2008-10-03

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/28167 ,  H01L21/3144 ,  H01L21/32105 ,  H01L29/4908 ,  H01L29/78603

摘要： A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.

摘要翻译： 实现SOI衬底制造工艺中温度的一致降低。 通过层叠在450℃以下的温度下生长的低温热氧化膜13和基于CVD法得到的氧化膜14，可以获得设置在SOI衬底上的栅极氧化膜。 由于热氧化膜13是100以下的薄膜，所以450℃以下的低温就可以了。 下面的热氧化膜13可以抑制结构缺陷，例如界面状态，并且可以使用形成在热氧化膜上的CVD氧化膜14来调节栅极氧化膜的厚度。 根据这种技术，可以使用常规的一般的氧化硅膜形成装置在低温下形成栅极氧化膜，从而在SOI衬底制造工艺中实现一致的温度降低。