Invention Grant
US08021992B2 High aspect ratio gap fill application using high density plasma chemical vapor deposition
有权
使用高密度等离子体化学气相沉积的高纵横比间隙填充应用
- Patent Title: High aspect ratio gap fill application using high density plasma chemical vapor deposition
- Patent Title (中): 使用高密度等离子体化学气相沉积的高纵横比间隙填充应用
-
Application No.: US11218695Application Date: 2005-09-01
-
Publication No.: US08021992B2Publication Date: 2011-09-20
- Inventor: Joung-Wei Liou , Tsang-Yu Liu , Chien-Feng Lin , Cheng-Liang Chang , Ming-Te Chen , Chia-Hui Lin , Ying-Hsiu Tsai , Szu-An Wu , Yin-Ping Lee
- Applicant: Joung-Wei Liou , Tsang-Yu Liu , Chien-Feng Lin , Cheng-Liang Chang , Ming-Te Chen , Chia-Hui Lin , Ying-Hsiu Tsai , Szu-An Wu , Yin-Ping Lee
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Tung & Associates
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
Public/Granted literature
- US20070049034A1 High aspect ratio gap fill application using high density plasma chemical vapor deposition Public/Granted day:2007-03-01
Information query
IPC分类:
