Invention Grant
- Patent Title: Maximum voltage source selector
- Patent Title (中): 最大电压源选择器
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Application No.: US12276706Application Date: 2008-11-24
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Publication No.: US08022574B2Publication Date: 2011-09-20
- Inventor: Ji-Yeoul Ryoo
- Applicant: Ji-Yeoul Ryoo
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0121023 20071126
- Main IPC: H02J1/00
- IPC: H02J1/00

Abstract:
A maximum voltage source selector adapted for use in a semiconductor device operative in a disable state or an enable state is disclosed. The maximum voltage source selector includes an output unit having an output node providing a maximum voltage selected from a first input voltage and a second input voltage. First and second gate transistors are commonly coupled to the output node and are respectively configured to select and provide the greater of the first and second input voltages to the output node in response to first and second selection signals without regard to whether the semiconductor device is in the disable state or the enable state. A selection unit generates the first and second selection signals in response to the first and second input voltages.
Public/Granted literature
- US20090134708A1 MAXIMUM VOLTAGE SOURCE SELECTOR Public/Granted day:2009-05-28
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