A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.