公开(公告)号：US20120215458A1

公开(公告)日：2012-08-23

申请号：US13383916

申请日：2010-07-13

申请人： Edward Marcotte ,  Kriston McGary ,  John Wallingford ,  Tae Joo Park ,  John O. Woods ,  Hye Ji Cha

发明人： Edward Marcotte ,  Kriston McGary ,  John Wallingford ,  Tae Joo Park ,  John O. Woods ,  Hye Ji Cha

IPC分类号： G06F19/18 ,  G06G7/60 ,  G06F17/10 ,  G06F19/24

CPC分类号： G16B20/00

摘要： A method for the quantification of equivalence between mutational phenotypes to develop non-obvious human disease models is described herein. The present inventors discover candidate genes for diseases of interest by: first, identifying orthologous phenotypes (called phenologs) involving the phenotype of interest (the first phenotype), in which a set of genes is associated with the first phenotype in the first organism, a set of genes is associated with a second phenotype in a second organism, the first and second phenotypes not having one or more common characteristics, and the second phenotype is selected such that at least one gene belongs to both the first and second phenotype gene sets; second, selecting from the second organism one or more second phenotype genes, other than the genes known to overlap the first and second phenotypes, as candidates for also belonging to the first phenotype in the first organism.

摘要翻译： 本文描述了用于定量突变表型之间的等同性以开发非明显的人类疾病模型的方法。 本发明人通过以下方法发现感兴趣疾病的候选基因：首先，鉴定涉及感兴趣的表型（第一表型）的直系同源异型（称为表型），其中一组基因与第一生物体中的第一表型相关联， 一组基因与第二生物体中的第二表型相关联，第一和第二表型不具有一个或多个共同特征，并且选择第二表型使得至少一个基因属于第一和第二表型基因组; 第二，从第二生物体中选择除了已知与第一和第二表型重叠的基因之外的一个或多个第二表型基因作为也属于第一生物体中的第一表型的候选物。

公开(公告)号：US20100008132A1

公开(公告)日：2010-01-14

申请号：US12397299

申请日：2009-03-03

申请人： Cheol-Seong Hwang ,  Tae-Joo Park

发明人： Cheol-Seong Hwang ,  Tae-Joo Park

IPC分类号： G11C11/00 ,  H01L47/00 ,  G11C11/416

CPC分类号： H01L45/144 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/53 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.

摘要翻译： 提供了电阻存储元件，相变存储元件，电阻随机存取存储器件，其信息读取方法，相变随机存取存储器件及其信息读取方法。 电阻随机存取存储器件包括以矩阵形式布置的电阻存储元件阵列。 每个电阻存储元件包括沿着列方向形成源极区和漏极区的衬底，并且在源区和漏区之间形成沟道区，形成在导电材料上的沟道区上的位线 具有沿着列的排列方向延伸的形状，形成在由电信号切换电阻的材料上的位线上的电阻切换层，以及形成在电阻切换层上的字线 导电材料具有沿着行方向延伸的形状。

公开(公告)号：US08023318B2

公开(公告)日：2011-09-20

申请号：US12397299

申请日：2009-03-03

申请人： Cheol-Seong Hwang ,  Tae-Joo Park

发明人： Cheol-Seong Hwang ,  Tae-Joo Park

IPC分类号： G11C11/00

CPC分类号： H01L45/144 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/53 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： A resistance memory element, a phase change memory element, a resistance random access memory device, an information reading method thereof, a phase change random access memory device, and an information reading method thereof are provided. The resistance random access memory device includes an array of resistance memory element arranged in a matrix. Each resistance memory element includes a substrate in which a source region and a drain region are formed along the column direction and a channel region is formed between the source region and the drain region, a bit line formed on the channel region out of a conductive material to have a shape extending along the arrangement direction of the columns, a resistance switching layer formed on the bit line out of a material of which electrical resistance is switched by an electrical signal, and a word line formed on the resistance switching layer out of a conductive material to have a shape extending along the row direction.

摘要翻译： 提供了电阻存储元件，相变存储元件，电阻随机存取存储器件，其信息读取方法，相变随机存取存储器件及其信息读取方法。 电阻随机存取存储器件包括以矩阵形式布置的电阻存储元件阵列。 每个电阻存储元件包括沿着列方向形成源极区和漏极区的衬底，并且在源区和漏区之间形成沟道区，形成在导电材料上的沟道区上的位线 具有沿着列的排列方向延伸的形状，形成在由电信号切换电阻的材料上的位线上的电阻切换层，以及形成在电阻切换层上的字线 导电材料具有沿着行方向延伸的形状。