Invention Grant
US08026156B2 Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
有权
氮化物系化合物层的制造方法,氮化镓衬底和垂直结构氮化物系半导体发光元件的制造方法
- Patent Title: Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
- Patent Title (中): 氮化物系化合物层的制造方法,氮化镓衬底和垂直结构氮化物系半导体发光元件的制造方法
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Application No.: US12489819Application Date: 2009-06-23
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Publication No.: US08026156B2Publication Date: 2011-09-27
- Inventor: Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
- Applicant: Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2005-0053331 20050621
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36

Abstract:
In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
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