Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits

Invention Grant

US08026165B2 Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits 有权

Title translation: 在微结构中产生气隙的方法，特别是用于集成电路的气隙互连结构类型

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Patent Title: Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits
Patent Title (中): 在微结构中产生气隙的方法，特别是用于集成电路的气隙互连结构类型
Application No.: US12434018

Application Date: 2009-05-01
Publication No.: US08026165B2

Publication Date: 2011-09-27
Inventor: Aziz Zenasni
Applicant: Aziz Zenasni
Applicant Address: FR Paris
Assignee: Commissariat a l'Energie Atomique
Current Assignee: Commissariat a l'Energie Atomique
Current Assignee Address: FR Paris
Agency: Miles & Stockbridge, P.C.
Priority: FR0852998 20080506
Main IPC: H01L21/4763
IPC: H01L21/4763

Process for producing air gaps in microstructures, especially of the air gap interconnect structure type for integrated circuits

Abstract:

A process for producing at least one air gap in a microstructure, including supplying a microstructure having at least one gap filled with a sacrificial material that decomposes starting from a temperature θ1, this gap being delimited over at least one part of its surface by a non-porous membrane, composed of a material that forms a matrix and of a pore-forming agent that decomposes at a temperature θ2

Abstract(Chinese):

一种用于在微结构中产生至少一个气隙的方法，包括提供具有填充有从温度开始分解的牺牲材料的至少一个间隙的微结构; 1，该间隙通过其表面的至少一部分被界定由形成基质的材料和在温度下分解的成孔剂组成的无孔膜; 2＆lt;＆lt; 1; 1至少20℃，并分散在该基质中，然后处理为了选择性地分解成孔剂，然后在温度≧≥1的条件下处理微结构，以便分解牺牲材料，温度≧＆amp;

Public/Granted literature

US20090280638A1 Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits Public/Granted day:2009-11-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）