Invention Grant
- Patent Title: Phase-change memory and method of making same
- Patent Title (中): 相变记忆及其制作方法
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Application No.: US12489440Application Date: 2009-06-23
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Publication No.: US08026503B2Publication Date: 2011-09-27
- Inventor: Li-Shu Tu
- Applicant: Li-Shu Tu
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.
Public/Granted literature
- US20100320435A1 PHASE-CHANGE MEMORY AND METHOD OF MAKING SAME Public/Granted day:2010-12-23
Information query
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