公开(公告)号：US20100320435A1

公开(公告)日：2010-12-23

申请号：US12489440

申请日：2009-06-23

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L47/00

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.

Abstract translation: 相变存储单元结构包括在衬底上的底二极管; 底部二极管上的加热杆; 围绕所述加热杆的第一介电层，其中所述第一介电层在所述加热杆周围形成凹部; 相变存储帽，其加盖加热杆和第一介电层; 以及覆盖所述第一介电层和所述相变存储盖的第二介电层，其中所述第二介电层在所述凹部中限定气隙。

公开(公告)号：US07675054B2

公开(公告)日：2010-03-09

申请号：US12016093

申请日：2008-01-17

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L29/04

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/1675

Abstract: Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.

Abstract translation: 提供了相变存储器件及其制造方法。 相变存储器件包括设置在第一介电层中的第一导电电极。 第二介电层设置在第一介电层上。 相变材料层设置在第二电介质层中并与第一导电电极电连接。 在第二电介质层中设置空间以至少隔离相变材料层和与其相邻的第二电介质层的侧壁。 第二导电电极设置在第二电介质层中并电连接到相变材料层。

公开(公告)号：US20090101880A1

公开(公告)日：2009-04-23

申请号：US11964618

申请日：2007-12-26

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L47/00 ,  B05D5/12

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1226 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: An exemplary memory device includes a first dielectric layer with a first conductive contact therein. A phase change material (PCM) is disposed on top of the first dielectric layer and provided with an insulating layer integrally on a top surface of the PCM. A first electrode is disposed over the first dielectric layer and covered a portion of the first conductive contact and the insulating layer in a first direction, contacting to the first conductive contact and a first side of the PCM. A second electrode is disposed over the first dielectric layer and covered a portion of the insulating layer in a second direction, contacting to a second side of the PCM. A second dielectric layer is disposed over the first dielectric layer to cover the first electrode, the second electrode, the insulating layer and the PCM, including a second conductive contact connected to the second electrode.

Abstract translation: 示例性的存储器件包括其中具有第一导电触点的第一介电层。 相变材料（PCM）设置在第一电介质层的顶部并且在PCM的顶表面上一体地设置有绝缘层。 第一电极设置在第一电介质层之上并且在第一方向上覆盖第一导电接触部分和绝缘层的一部分，与第一导电接触件和PCM的第一侧接触。 第二电极设置在第一电介质层之上并且在第二方向上覆盖绝缘层的一部分，接触PCM的第二侧。 第二电介质层设置在第一电介质层上以覆盖第一电极，第二电极，绝缘层和PCM，包括连接到第二电极的第二导电触点。

公开(公告)号：US08305800B2

公开(公告)日：2012-11-06

申请号：US13111963

申请日：2011-05-20

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: G11C11/00

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: A substrate having buried address lines and a first dielectric layer is provided. A conductive electrode is formed in the first conductive layer. A top portion of the conductive electrode is exposed. A second dielectric layer is deposited on surface of the exposed top portion. The second dielectric layer defines a recess around the top portion. A third dielectric layer is deposited over the second dielectric layer. A portion of the third dielectric layer and a portion of the second dielectric layer are removed, thereby exposing a top surface of the top portion of the conductive electrode. The top portion of the conductive electrode is salicidized to form a heating stem. The remaining third dielectric layer is selectively removed from the recess. A phase-change material layer covers the heating stem and the second dielectric layer. The phase-change material layer is etched, thereby forming a phase-change storage cap.

Abstract translation: 提供具有掩埋地址线和第一介电层的衬底。 在第一导电层中形成导电电极。 导电电极的顶部露出。 第二电介质层沉积在暴露顶部的表面上。 第二电介质层围绕顶部限定凹部。 在第二电介质层上沉积第三电介质层。 去除第三电介质层的一部分和第二电介质层的一部分，从而暴露导电电极的顶部的顶表面。 导电电极的顶部被水化以形成加热杆。 剩余的第三电介质层从凹槽中选择性地去除。 相变材料层覆盖加热杆和第二介质层。 相变材料层被蚀刻，从而形成相变储存帽。

公开(公告)号：US08026503B2

公开(公告)日：2011-09-27

申请号：US12489440

申请日：2009-06-23

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L45/00

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess.

Abstract translation: 相变存储单元结构包括在衬底上的底二极管; 底部二极管上的加热杆; 围绕所述加热杆的第一介电层，其中所述第一介电层在所述加热杆周围形成凹部; 相变存储帽，其加盖加热杆和第一介电层; 以及覆盖所述第一介电层和所述相变存储帽的第二介电层，其中所述第二介电层在所述凹部中限定气隙。

公开(公告)号：US20110223739A1

公开(公告)日：2011-09-15

申请号：US13111963

申请日：2011-05-20

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L21/76

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

Abstract: A substrate having buried address lines and a first dielectric layer is provided. A conductive electrode is formed in the first conductive layer. A top portion of the conductive electrode is exposed. A second dielectric layer is deposited on surface of the exposed top portion. The second dielectric layer defines a recess around the top portion. A third dielectric layer is deposited over the second dielectric layer. A portion of the third dielectric layer and a portion of the second dielectric layer are removed, thereby exposing a top surface of the top portion of the conductive electrode. The top portion of the conductive electrode is salicidized to form a heating stem. The remaining third dielectric layer is selectively removed from the recess. A phase-change material layer covers the heating stem and the second dielectric layer. The phase-change material layer is etched, thereby forming a phase-change storage cap.

Abstract translation: 提供具有掩埋地址线和第一介电层的衬底。 在第一导电层中形成导电电极。 导电电极的顶部露出。 第二电介质层沉积在暴露顶部的表面上。 第二电介质层围绕顶部限定凹部。 在第二电介质层上沉积第三电介质层。 去除第三电介质层的一部分和第二电介质层的一部分，从而暴露导电电极的顶部的顶表面。 导电电极的顶部被水化以形成加热杆。 剩余的第三电介质层从凹槽中选择性地去除。 相变材料层覆盖加热杆和第二介质层。 相变材料层被蚀刻，从而形成相变储存帽。

公开(公告)号：US20100163828A1

公开(公告)日：2010-07-01

申请号：US12464014

申请日：2009-05-11

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L45/00 ,  H01L21/20

CPC classification number: H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device is provided, including a semiconductor substrate with a first conductive semiconductor layer disposed thereover, wherein the first conductive semiconductor layer has a first conductivity type. A first dielectric layer is disposed over the semiconductor substrate. A second conductive semiconductor layer having a second conductivity type opposite to the first conductivity type is disposed in the first dielectric layer. A heating electrode is disposed in the first dielectric layer and formed over the second conductive semiconductor layer, wherein the heating electrode has a tapered cross section and includes metal silicide. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer. An electrode is disposed over the second dielectric layer, covering the phase change material layer.

Abstract translation: 提供了一种相变存储器件，包括其上设置有第一导电半导体层的半导体衬底，其中第一导电半导体层具有第一导电类型。 第一电介质层设置在半导体衬底之上。 具有与第一导电类型相反的第二导电类型的第二导电半导体层设置在第一电介质层中。 加热电极设置在第一电介质层中并形成在第二导电半导体层上，其中加热电极具有锥形横截面并且包括金属硅化物。 第二介电层设置在第一介电层上。 相变材料层设置在第二电介质层中。 电极设置在第二电介质层上，覆盖相变材料层。

公开(公告)号：US20090101884A1

公开(公告)日：2009-04-23

申请号：US12016093

申请日：2008-01-17

Applicant: Li-Shu Tu

Inventor： Li-Shu Tu

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/1675

Abstract: Phase change memory devices and methods for fabricating the same are provided. A phase change memory device includes a first conductive electrode disposed in a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. A phase change material layer is disposed in the second dielectric layer and electrically connected to the first conductive electrode. A space is disposed in the second dielectric layer to at least isolate a sidewall of the phase change material layer and the second dielectric layer adjacent thereto. A second conductive electrode is disposed in the second dielectric layer and electrically connected to the phase change material layer.

Abstract translation: 提供了相变存储器件及其制造方法。 相变存储器件包括设置在第一介电层中的第一导电电极。 第二介电层设置在第一介电层上。 相变材料层设置在第二电介质层中并与第一导电电极电连接。 在第二电介质层中设置空间以至少隔离相变材料层和与其相邻的第二电介质层的侧壁。 第二导电电极设置在第二电介质层中并电连接到相变材料层。