Invention Grant
US08026539B2 Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same 有权
具有掺杂的含硅覆盖层的金属氧化物半导体器件及其制造方法

Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
Abstract:
Methods are provided for forming a semiconductor device comprising a semiconductor substrate. In accordance with an exemplary embodiment, a method comprises the steps of forming a high-k dielectric layer overlying the semiconductor substrate, forming a metal-comprising gate layer overlying the high-k dielectric layer, forming a doped silicon-comprising capping layer overlying the metal-comprising gate layer, and depositing a silicon-comprising gate layer overlying the doped silicon-comprising capping layer.
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