发明授权
- 专利标题: Thin film semiconductor device comprising nanocrystalline silicon powder
- 专利标题(中): 包括纳米晶硅粉末的薄膜半导体器件
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申请号: US10543475申请日: 2004-01-30
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公开(公告)号: US08026565B2公开(公告)日: 2011-09-27
- 发明人: Margit Harting , David Thomas Britton
- 申请人: Margit Harting , David Thomas Britton
- 申请人地址: ZA Cape Town
- 专利权人: University of Cape Town
- 当前专利权人: University of Cape Town
- 当前专利权人地址: ZA Cape Town
- 代理机构: Frommer Lawrence & Haug LLP
- 代理商 Ronald R Santucci
- 优先权: ZA2003/0849 20030130
- 国际申请: PCT/IB2004/000221 WO 20040130
- 国际公布: WO2004/068536 WO 20040812
- 主分类号: B82B
- IPC分类号: B82B ; B82Y20/00
摘要:
A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. A first active layer comprises source 12.1 and drain 12.2 conductors of colloidal silver ink, that are printed directly onto the paper substrate. A second active layer is an intrinsic semiconductor layer 14 of colloidal nanocrystalline silicon ink which is printed onto the first layer. A third active layer comprises a metallic conductor 16 of colloidal silver which is printed onto the second layer to form a gate electrode. This invention extends to other thin film semiconductors such as photovoltaic cells and to a method of manufacturing semiconductors.
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