发明授权
- 专利标题： Photomask blank, photomask, and methods of manufacturing the same
- 专利标题（中）： 光掩模坯料，光掩模及其制造方法
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申请号： US12415429申请日： 2009-03-31
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公开(公告)号： US08029948B2公开(公告)日： 2011-10-04
- 发明人: Masahiro Hashimoto , Hiroyuki Iwashita , Atsushi Kominato
- 申请人： Masahiro Hashimoto , Hiroyuki Iwashita , Atsushi Kominato
- 申请人地址： JP Tokyo
- 专利权人： Hoya Corporation
- 当前专利权人： Hoya Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2008-093517 20080331
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.