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1.发明授权Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same 有权光掩模坯料，其制造方法，光掩模及其制造方法公开(公告)号：US08663876B2
公开(公告)日：2014-03-04
申请号：US13201368
申请日：2010-02-04
摘要： A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.
摘要翻译： 用于制造适用于具有200nm以下的波长的曝光光的光掩模的光掩模坯料在透明基板上具有薄膜。 薄膜由含有过渡金属，硅和碳的材料制成，并且包含碳化硅和/或过渡金属碳化物。
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公开(公告)号：US08512916B2
公开(公告)日：2013-08-20
申请号：US12935766
申请日：2009-03-31
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer.
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公开(公告)号：US08323858B2
公开(公告)日：2012-12-04
申请号：US13223140
申请日：2011-08-31
IPC分类号： G03F1/24
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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4.发明授权公开(公告)号：US08304147B2
公开(公告)日：2012-11-06
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/20
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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5.发明申请MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US20120115075A1
公开(公告)日：2012-05-10
申请号：US13288365
申请日：2011-11-03
摘要： A mask blank for use in the manufacture of a transfer mask adapted to be applied with ArF exposure light is disclosed. The mask blank has a light-shielding film on a transparent substrate. The light-shielding film has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 5.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 公开了一种用于制造适于施加ArF曝光光的转印掩模的掩模坯料。 掩模坯料在透明基板上具有遮光膜。 遮光膜具有至少两层结构，其包括主要由含有过渡金属，硅和氮的材料构成的下层以及主要由含有过渡金属，硅和氮的材料组成的上层。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比率为1.0以上且5.0以下。
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6.发明申请公开(公告)号：US20120100470A1
公开(公告)日：2012-04-26
申请号：US13378739
申请日：2010-06-17
摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 has an at least two-layer structure comprising a lower layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen and an upper layer composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. The ratio of the etching rate of the lower layer to that of the upper layer is 1.0 or more and 20.0 or less in etching which is carried out by supplying a fluorine-containing substance to a target portion and irradiating charged particles to the target portion.
摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2具有至少两层结构，包括下层 主要由含有过渡金属，硅和至少一种或多种选自氧和氮的元素的材料构成的层，以及主要由含有过渡金属，硅以及至少一种或多种元素的材料组成的上层 氧气和氮气。 在通过向目标部分供给含氟物质并将带电粒子照射到目标部分进行的蚀刻中，下层的蚀刻速率与上层的蚀刻速率的比例为1.0以上且20.0以下。
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公开(公告)号：US08029948B2
公开(公告)日：2011-10-04
申请号：US12415429
申请日：2009-03-31
IPC分类号： G03F1/00
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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公开(公告)号：US20110177436A1
公开(公告)日：2011-07-21
申请号：US13008356
申请日：2011-01-18
IPC分类号： G03F1/00
摘要： A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.
摘要翻译： 掩模坯料包括形成在透明基板上的透明基板和遮光膜。 遮光膜由主要由可用氯气气体干蚀刻的金属组成的材料制成。 抗蚀剂膜用于在遮光膜中形成转印图案。 在遮光膜的上表面上形成蚀刻掩模膜，并且由含有过渡金属，硅以及氮和氧中的至少一种的材料制成。 过渡金属与蚀刻掩模膜中的过渡金属和硅的总含量比小于9％。
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9.发明申请PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权PHOTOMASK BLANK，PHOTOMASK和制造光电隔离层的方法公开(公告)号：US20110104592A1
公开(公告)日：2011-05-05
申请号：US12935517
申请日：2009-03-31
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , G03F1/46 , G03F1/54 , G03F1/80 , H01L21/0274
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译： 本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为60nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的30％以下。
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公开(公告)号：US06840355B2
公开(公告)日：2005-01-11
申请号：US10316195
申请日：2002-12-10
申请人： Hiroyuki Iwashita
发明人： Hiroyuki Iwashita
CPC分类号： A47K13/10 , E05F5/10 , E05Y2201/21 , E05Y2201/256 , E05Y2201/266 , E05Y2900/614 , F16F9/145 , F16F9/34 , Y10T16/61
摘要： A rotary damper device includes a case in which a viscous fluid is filled and sealed, a rotation shaft relatively rotatably supported by the case, a rotation vane formed protruded from the rotation shaft, and a check valve mounted on a tip part of the rotation vane. A passage where the viscous fluid passes through is formed in the rotation vane. The check valve is provided with an opposing face part facing the passage and a frame body interposing the rotation vane. An elastic member for energizing the opposing face part of the check valve for closing the passage of the rotation vane is formed in either the rotation vane or the opposite side of the frame body of the opposing face part.
摘要翻译： 一种旋转阻尼器装置，包括一个填充和密封粘性流体的壳体，由壳体相对可旋转地支撑的旋转轴，从旋转轴突出的旋转叶片和安装在旋转叶片的顶端部分上的止回阀 。 粘性流体通过的通道形成在旋转叶片中。 止回阀设置有面向通道的相对面部和插入旋转叶片的框体。 在旋转叶片或相对面部的框体的相对侧上形成有用于对止逆阀的相对面部进行动作以闭合旋转叶片的通道的弹性构件。
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