发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12635160申请日： 2009-12-10
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公开(公告)号： US08030201B2公开(公告)日： 2011-10-04
- 发明人: Koji Soejima , Yoichiro Kurita , Masaya Kawano , Shintaro Yamamichi , Katsumi Kikuchi
- 申请人： Koji Soejima , Yoichiro Kurita , Masaya Kawano , Shintaro Yamamichi , Katsumi Kikuchi
- 申请人地址： JP Kanagawa JP Tokyo
- 专利权人： Renesas Electronics Corporation,NEC Corporation
- 当前专利权人： Renesas Electronics Corporation,NEC Corporation
- 当前专利权人地址： JP Kanagawa JP Tokyo
- 代理机构： Young & Thompson
- 优先权： JP2006-121575 20060426
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
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