Invention Grant
- Patent Title: Focused ion beam field source
- Patent Title (中): 聚焦离子束场源
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Application No.: US12251917Application Date: 2008-10-15
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Publication No.: US08030621B2Publication Date: 2011-10-04
- Inventor: Paulo Lozano , Manuel Martinez-Sanchez
- Applicant: Paulo Lozano , Manuel Martinez-Sanchez
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Proskauer Rose LLP
- Main IPC: H01T23/00
- IPC: H01T23/00

Abstract:
An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.
Public/Granted literature
- US20090114838A1 FOCUSED ION BEAM FIELD SOURCE Public/Granted day:2009-05-07
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