Invention Grant
- Patent Title: Method for fabrication of a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US10572525Application Date: 2003-09-19
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Publication No.: US08034643B2Publication Date: 2011-10-11
- Inventor: Xuejun Kang , Daike Wu , Edward Robert Perry , Shu Yuan
- Applicant: Xuejun Kang , Daike Wu , Edward Robert Perry , Shu Yuan
- Applicant Address: SG Singapore
- Assignee: Tinggi Technologies Private Limited
- Current Assignee: Tinggi Technologies Private Limited
- Current Assignee Address: SG Singapore
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP.
- International Application: PCT/SG03/00223 WO 20030919
- International Announcement: WO2005/029573 WO 20050331
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabrication of a semiconductor device on a substrate, the semiconductor having a wafer. The method includes the steps:(a) applying a seed layer of a thermally conductive metal to the wafer;(b) electroplating a relatively thick layer of the conductive metal on the seed layer, and(c) removing the substrate. A corresponding semiconductor device is also disclosed.
Public/Granted literature
- US20080164480A1 Fabrication of Semiconductor Devices Public/Granted day:2008-07-10
Information query
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