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    Process for sapphire substrate separation by laser
    1.
    发明授权
    Process for sapphire substrate separation by laser 有权
    激光蓝宝石衬底分离工艺

    公开(公告)号：US08426292B2

    公开(公告)日：2013-04-23

    申请号：US12746760

    申请日：2008-12-01

    Applicant: Shu Yuan ,  Xuejun Kang

    Inventor： Shu Yuan ,  Xuejun Kang

    IPC: H01L21/30

    CPC classification number: H01L33/0079

    Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a wafer comprising a substrate with a plurality of epitaxial layers mounted on the substrate. Patterns are formed above the plurality of epitaxial layers remote from the substrate. A second substrate of a conductive metal is formed on the plurality of epitaxial layers remote from the substrate and between the patterns. The second substrate, the plurality of epitaxial layers and the substrate are at least partially encapsulated with a soft buffer material. The substrate is separated from the plurality of epitaxial layers at the wafer level and while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers by applying a laser beam through the substrate to an interface of the substrate and the plurality of epitaxial layers, the laser beam having well defined edges.

    Abstract translation: 公开了制造半导体器件的方法。 该方法包括提供包括衬底的晶片，其具有安装在衬底上的多个外延层。 在离开衬底的多个外延层上形成图案。 导电金属的第二衬底形成在远离衬底并且在图案之间的多个外延层上。 第二衬底，多个外延层和衬底至少部分地用软缓冲材料包封。 衬底在晶片级别与多个外延层分离，并且当多个外延层是完整的，同时通过将激光束通过衬底施加到衬底的界面并保持多个外延层的电和机械性能，并且 多个外延层，激光束具有良好限定的边缘。

    Fabrication of reflective layer on semiconductor light emitting devices
    2.
    发明授权
    Fabrication of reflective layer on semiconductor light emitting devices 有权
    在半导体发光器件上制造反射层

    公开(公告)号：US08309377B2

    公开(公告)日：2012-11-13

    申请号：US11578281

    申请日：2005-03-01

    Applicant: Shu Yuan ,  Xuejun Kang

    Inventor： Shu Yuan ,  Xuejun Kang

    IPC: H01L21/00

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/64

    Abstract: Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.

    Abstract translation: 半导体发光二极管上的反射层的制造在半导体发光二极管上制造反射层的方法，该半导体发光二极管在基板上具有多个外延层的晶片; 所述方法包括在所述多个外延层的前表面上施加第一欧姆接触层，所述第一欧姆接触层是反射材料以还用作反射层。

    FABRICATION OF SEMICONDUCTOR DEVICES
    3.
    发明申请
    FABRICATION OF SEMICONDUCTOR DEVICES 有权
    半导体器件的制造

    公开(公告)号：US20100255656A1

    公开(公告)日：2010-10-07

    申请号：US12746760

    申请日：2008-12-01

    Applicant: Shu Yuan ,  Xuejun Kang

    Inventor： Shu Yuan ,  Xuejun Kang

    IPC: H01L21/30

    CPC classification number: H01L33/0079

    Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a wafer comprising a substrate with a plurality of epitaxial layers mounted on the substrate. Patterns are formed above the plurality of epitaxial layers remote from the substrate. A second substrate of a conductive metal is formed on the plurality of epitaxial layers remote from the substrate and between the patterns. The second substrate, the plurality of epitaxial layers and the substrate are at least partially encapsulated with a soft buffer material. The substrate is separated from the plurality of epitaxial layers at the wafer level and while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers by applying a laser beam through the substrate to an interface of the substrate and the plurality of epitaxial layers, the laser beam having well defined edges.

    Abstract translation: 公开了制造半导体器件的方法。 该方法包括提供包括衬底的晶片，其具有安装在衬底上的多个外延层。 在离开衬底的多个外延层上形成图案。 导电金属的第二衬底形成在远离衬底并且在图案之间的多个外延层上。 第二衬底，多个外延层和衬底至少部分地用软缓冲材料包封。 衬底在晶片级别与多个外延层分离，并且当多个外延层是完整的，同时通过将激光束通过衬底施加到衬底的界面并保持多个外延层的电和机械性能，并且 多个外延层，激光束具有良好限定的边缘。

    Fabrication of Conductive Metal Layer on Semiconductor Devices
    4.
    发明申请
    Fabrication of Conductive Metal Layer on Semiconductor Devices 审中-公开
    半导体器件导电金属层的制造

    公开(公告)号：US20080210970A1

    公开(公告)日：2008-09-04

    申请号：US10572524

    申请日：2003-09-19

    Applicant: Xuejun Kang ,  Daike Wu ,  Edward Robert Perry ,  Shu Yuan

    Inventor： Xuejun Kang ,  Daike Wu ,  Edward Robert Perry ,  Shu Yuan

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L21/28575 ,  H01L33/0079 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/32341 ,  H01L2924/00

    Abstract: A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps: (a) applying to the ohmic contact layer a seed layer of a thermally conductive metal; (b) electroplating a relatively thick layer of the conductive metal on the seed layer; and (c) removing the substrate. A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode.

    Abstract translation: 一种在衬底上制造发光器件的方法，所述发光器件具有多个外延层的晶片和在远离衬底的外延层上的欧姆接触层。 该方法包括以下步骤：（a）向欧姆接触层施加导热金属种子层; （b）在种子层上电镀较厚的导电金属层; 和（c）去除基底。 还公开了相应的发光器件。 发光器件是GaN发光二极管或激光二极管。

    Fabrication of Semiconductor Devices
    5.
    发明申请
    Fabrication of Semiconductor Devices 有权
    半导体器件制造

    公开(公告)号：US20080128722A1

    公开(公告)日：2008-06-05

    申请号：US10593107

    申请日：2005-03-01

    Applicant: Shu Yuan ,  Xuejun Kang

    Inventor： Shu Yuan ,  Xuejun Kang

    IPC: H01L33/00 ,  H01L21/329

    CPC classification number: H01S5/187 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01S5/0201 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2027 ,  H01S5/34333 ,  H01S2301/173

    Abstract: A method for fabrication of a semiconductor device, the semiconductor device having a plurality of epitaxial layers on a substrate. The plurality of epitaxial layers include an active region in which light is able to be generated. The method comprises applying at least one first ohmic contact layer to a front surface of the epitaxial layer, the first ohmic contact layer also acting as a reflector. The substrate is then remove from a rear surface of the epitaxial layers. The rear surface is then textured.

    Abstract translation: 一种制造半导体器件的方法，该半导体器件在衬底上具有多个外延层。 多个外延层包括能够产生光的有源区。 该方法包括将至少一个第一欧姆接触层施加到外延层的前表面，第一欧姆接触层也起反射器的作用。 然后将衬底从外延层的后表面去除。 后表面然后纹理化。

    External light efficiency of light emitting diodes
    6.
    发明授权
    External light efficiency of light emitting diodes 有权
    发光二极管的外部光效

    公开(公告)号：US08395167B2

    公开(公告)日：2013-03-12

    申请号：US12377380

    申请日：2007-08-16

    Applicant: Xuejun Kang ,  Zhen Chen ,  Tien Khee Ng ,  Jenny Lam ,  Shu Yuan

    Inventor： Xuejun Kang ,  Zhen Chen ,  Tien Khee Ng ,  Jenny Lam ,  Shu Yuan

    IPC: H01L33/00

    CPC classification number: H01L33/22 ,  H01L33/405

    Abstract: A method to improve the external light efficiency of light emitting diodes, the method comprising etching an external surface of an n-type layer of the light emitting diode to form surface texturing, the surface texturing reducing internal light reflection to increase light output. A corresponding light emitting diode is also disclosed.

    Abstract translation: 一种提高发光二极管的外部光效率的方法，所述方法包括蚀刻发光二极管的n型层的外表面以形成表面纹理化，所述表面纹理化减少内部光反射以增加光输出。 还公开了相应的发光二极管。

    Method for fabricating at least one transistor
    7.
    发明授权
    Method for fabricating at least one transistor 失效
    制造至少一个晶体管的方法

    公开(公告)号：US08067269B2

    公开(公告)日：2011-11-29

    申请号：US12091036

    申请日：2006-09-01

    Applicant: Shu Yuan ,  Xuejun Kang ,  Shi Ming Lin

    Inventor： Shu Yuan ,  Xuejun Kang ,  Shi Ming Lin

    IPC: H01L21/50

    CPC classification number: H01L27/0605 ,  H01L29/2003 ,  H01L29/66462

    Abstract: A method for fabricating transistors such as high electron mobility transistors, each transistor comprising a plurality of epitaxial layers on a common substrate, method comprising: (a) forming a plurality of source contacts on a first surface of the plurality of epitaxial layers; (b) forming at least one drain contact on the first surface; (c) forming at least one gate contact on the first surface; (d) forming at least one insulating layer over and between the gate contacts, source contacts and the drain contacts; (e) forming a conductive layer over at least a part of the at least one insulating layer for connecting the source contacts; and (f) forming at least one heat sink layer over the conductive layer.

    Abstract translation: 一种用于制造诸如高电子迁移率晶体管的晶体管的方法，每个晶体管在公共衬底上包括多个外延层，所述方法包括：（a）在所述多个外延层的第一表面上形成多个源极触点; （b）在所述第一表面上形成至少一个漏极接触; （c）在第一表面上形成至少一个栅极接触; （d）在栅极触点，源极触点和漏极触点之上和之上形成至少一个绝缘层; （e）在所述至少一个绝缘层的至少一部分上形成用于连接所述源极触点的导电层; 和（f）在所述导电层上形成至少一个散热层。

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