Invention Grant
US08034654B2 Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
有权
在硅晶片上形成太阳能电池的GexSi1-x缓冲层的方法
- Patent Title: Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
- Patent Title (中): 在硅晶片上形成太阳能电池的GexSi1-x缓冲层的方法
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Application No.: US12461175Application Date: 2009-08-04
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Publication No.: US08034654B2Publication Date: 2011-10-11
- Inventor: Edward Yi Chang , Shih-Hsuan Tang , Yue-Cin Lin
- Applicant: Edward Yi Chang , Shih-Hsuan Tang , Yue-Cin Lin
- Applicant Address: TW Hsinchu
- Assignee: National Chiao Tung University
- Current Assignee: National Chiao Tung University
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW97145032A 20081121
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.
Public/Granted literature
- US20100129956A1 Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer Public/Granted day:2010-05-27
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