公开(公告)号：US08034654B2

公开(公告)日：2011-10-11

申请号：US12461175

申请日：2009-08-04

Applicant: Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

Inventor： Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

IPC: H01L21/00

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1812 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.

Abstract translation: 公开了Si +被注入到Si衬底上以增强变质GexSi1-x缓冲层与Si衬底之间界面处的应变松弛的方法，以便于在Si衬底上生长高质量的Ge。 并且通过UHVCVD在Si衬底的顶部生长几个GexSi1-x缓冲层（Si / Ge0.8Si0.2 / Ge0.9Si0.1 / Ge）。 然后在GexSi1-x缓冲层上生长低位错密度的纯Ge层。 最后，在GexSi1-x缓冲层上长大高效III-V太阳能电池。

公开(公告)号：US20100129956A1

公开(公告)日：2010-05-27

申请号：US12461175

申请日：2009-08-04

Applicant: Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

Inventor： Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1812 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.

Abstract translation: 公开了Si +被注入到Si衬底上以增强变质GexSi1-x缓冲层与Si衬底之间界面处的应变松弛的方法，以便于在Si衬底上生长高质量的Ge。 并且通过UHVCVD在Si衬底的顶部生长几个GexSi1-x缓冲层（Si / Ge0.8Si0.2 / Ge0.9Si0.1 / Ge）。 然后在GexSi1-x缓冲层上生长低位错密度的纯Ge层。 最后，在GexSi1-x缓冲层上长大高效III-V太阳能电池。