发明授权
- 专利标题： Film formation method and apparatus for forming silicon-containing insulating film doped with metal
- 专利标题（中）： 用于形成掺杂有金属的含硅绝缘膜的成膜方法和装置
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申请号： US12417939申请日： 2009-06-09
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公开(公告)号： US08034673B2公开(公告)日： 2011-10-11
- 发明人: Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
- 申请人： Kentaro Kadonaga , Yamato Tonegawa , Pao-Hwa Chou , Kazuhide Hasebe , Tetsuya Shibata
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2008-109613 20080418
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.