发明授权
- 专利标题: Method to recover patterned semiconductor wafers for rework
- 专利标题(中): 恢复图案化半导体晶片进行返工的方法
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申请号: US12031726申请日: 2008-02-15
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公开(公告)号: US08034718B2公开(公告)日: 2011-10-11
- 发明人: Steven R. Codding , David Domina , James L. Hardy, Jr. , Timothy C. Krywanczyk
- 申请人: Steven R. Codding , David Domina , James L. Hardy, Jr. , Timothy C. Krywanczyk
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb I.P. Law Firm, LLC
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.
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