Invention Grant
- Patent Title: Method to recover patterned semiconductor wafers for rework
- Patent Title (中): 恢复图案化半导体晶片进行返工的方法
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Application No.: US12031726Application Date: 2008-02-15
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Publication No.: US08034718B2Publication Date: 2011-10-11
- Inventor: Steven R. Codding , David Domina , James L. Hardy, Jr. , Timothy C. Krywanczyk
- Applicant: Steven R. Codding , David Domina , James L. Hardy, Jr. , Timothy C. Krywanczyk
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb I.P. Law Firm, LLC
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.
Public/Granted literature
- US20080138989A1 METHOD TO RECOVER PATTERNED SEMICONDUCTOR WAFERS FOR REWORK Public/Granted day:2008-06-12
Information query
IPC分类: